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BC547 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BC547
Description  NPN EPITAXIAL SILICON TRANSISTOR
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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BC547 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
hFE Classification
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BC546
: BC547/550
: BC548/549
80
50
30
V
V
V
VCEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
V
V
V
VEBO
Emitter-Base Voltage
: BC546/547
: BC548/549/550
6
5
V
V
IC
Collector Current (DC)
100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB=30V, IE=0
15
nA
hFE
DC Current Gain
VCE=5V, IC=2mA
110
800
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
90
200
250
600
mV
mV
VBE (sat)
Base-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
700
900
mV
mV
VBE (on)
Base-Emitter On Voltage
VCE=5V, IC=2mA
VCE=5V, IC=10mA
580
660
700
720
mV
mV
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=100MHz
300
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
3.5
6
pF
Cib
Input Capacitance
VEB=0.5V, IC=0, f=1MHz
9
pF
NF
Noise Figure
: BC546/547/548
: BC549/550
: BC549
: BC550
VCE=5V, IC=200µA
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA
RG=2KΩ, f=30~15000MHz
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1. Collector 2. Base 3. Emitter
TO-92
1


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