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SPW17N80C2 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SPW17N80C2
Description  Cool MOS Power Transistor
Download  11 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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SPW17N80C2 Datasheet(HTML) 1 Page - Infineon Technologies AG

 
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2000-05-29
Page 1
SPW17N80C2
Preliminary data
Cool MOS™ Power Transistor
C
Power Semiconductors
O
O LMOS
Feature
· New revolutionary high voltage technology
· Worldwide best RDS(on) in TO 247
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
Product Summary
VDS
800
V
RDS(on)
290
m
W
ID
17
A
P-TO247
Type
Package
Ordering Code
SPW17N80C2
P-TO247
Q67040-S4359
Marking
SPW17N80C2
Maximum Ratings, at
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
17
11
A
Pulsed drain current,
tp limited by Tjmax
ID puls
51
Avalanche energy, single pulse
ID=4A, VDD=50V
EAS
670
mJ
Avalanche energy, repetitive
tAR limited by Tjmax1)
ID=17A, VDD=50V
EAR
0.5
Avalanche current, repetitive
tAR limited by Tjmax
IAR
17
A
Reverse diode d
v/dt
IS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
d
v/dt
6
V/ns
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
208
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C


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